A 14.6 GHz–19.2 GHz digitally controlled injection locked frequency doubler in 45 nm SOI CMOS
Kursu, Olli; Rahkonen, Timo; Pärssinen, Aarno (2022-06-01)
O. Kursu, T. Rahkonen and A. Pärssinen, "A 14.6 GHz–19.2 GHz Digitally Controlled Injection Locked Frequency Doubler in 45 nm SOI CMOS," 2021 16th European Microwave Integrated Circuits Conference (EuMIC), 2022, pp. 104-107, doi: 10.23919/EuMIC50153.2022.9783720
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https://urn.fi/URN:NBN:fi-fe2022070851586
Tiivistelmä
Abstract
In this paper we present a wide locking range (14.6 GHz–19.2 GHz and 12.65 GHz–20.6 GHz, -3 db and -6 dB, respectively) injection locked frequency doubler implemented with 45 nm CMOS SOI technology. The doubler is designed and optimized for a 5G sliding-IF transceiver architecture. It exploits a digitally tunable LC tank to enhance the frequency range. Measured results show 36–55 dBc fundamental and 40–54 dBc 3rd harmonic suppression as well as 10 dB peak conversion gain. Phase noise performance of the doubler has also been measured. The power consumption varies from 5 mW to 11 mW. The core size is 270 µm x 450 µm.
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