Capacitive Crosstalk Model Between RF Probes in On-Wafer Measurements at Sub-THz/THz Frequencies
Awan, Ahmad Raza; Maanselkä, Aleksi; Singh, Sumit Pratap; Kursu, Olli; Pärssinen, Aarno; Leinonen, Marko E. (2026-02-25)
IEEE
25.02.2026
A. R. Awan, A. Maanselkä, S. P. Singh, O. Kursu, A. Pärssinen and M. E. Leinonen, "Capacitive Crosstalk Model Between RF Probes in On-Wafer Measurements at Sub-THz/THz Frequencies," 2025 50th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Helsinki, Finland, 2025, pp. 1-2, doi: 10.1109/IRMMW-THz61557.2025.11406078
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© 2026 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists,or reuse of any copyrighted component of this work in other works.
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Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:oulu-202603022016
https://urn.fi/URN:NBN:fi:oulu-202603022016
Tiivistelmä
Abstract
Accurate characterization of devices in the sub-THz/THz frequency ranges is crucial for advancing next generation communication and sensing technologies. At these higher frequencies, factors such as RF leakage between probes and calibration transfer errors across different substrates can introduce significant inaccuracies in measurements. To address these challenges, a DUT consisting of balun and transformer is designed and optimized for 220 to 330 GHz frequencies in a 130 nm SiGe BiCMOS process. Discrepancies are observed between the measured and simulated S21 results. This work investigates RF capacitive crosstalk between the RF probes and its modeling in the simulation environment to improve the alignment of the measurement and simulation results. After incorporating the capacitive crosstalk model, a better agreement is achieved between the measured and simulated results. The findings provide valuable information to improve the alignment between the simulated and measured results.
Accurate characterization of devices in the sub-THz/THz frequency ranges is crucial for advancing next generation communication and sensing technologies. At these higher frequencies, factors such as RF leakage between probes and calibration transfer errors across different substrates can introduce significant inaccuracies in measurements. To address these challenges, a DUT consisting of balun and transformer is designed and optimized for 220 to 330 GHz frequencies in a 130 nm SiGe BiCMOS process. Discrepancies are observed between the measured and simulated S21 results. This work investigates RF capacitive crosstalk between the RF probes and its modeling in the simulation environment to improve the alignment of the measurement and simulation results. After incorporating the capacitive crosstalk model, a better agreement is achieved between the measured and simulated results. The findings provide valuable information to improve the alignment between the simulated and measured results.
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