Designing Antennas and RF Components at 110–330 GHz Using IPD Technology
Ibrahim, Muhammad; Rasilainen, Kimmo; Saijets, Jan; Rantakari, Pekka; Pärssinen, Aarno; Leinonen, Marko E. (2025-06-26)
Ibrahim, Muhammad
Rasilainen, Kimmo
Saijets, Jan
Rantakari, Pekka
Pärssinen, Aarno
Leinonen, Marko E.
IEEE
26.06.2025
M. Ibrahim, K. Rasilainen, J. Saijets, P. Rantakari, A. Pärssinen and M. E. Leinonen, "Designing Antennas and RF Components at 110–330 GHz Using IPD Technology," 2025 IEEE 75th Electronic Components and Technology Conference (ECTC), Dallas, TX, USA, 2025, pp. 1426-1433, doi: 10.1109/ECTC51687.2025.00247
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© 2025 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
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© 2025 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
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Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:oulu-202506275018
https://urn.fi/URN:NBN:fi:oulu-202506275018
Tiivistelmä
Abstract
This work analyses the performance of passive devices designed for the frequency range of 110–330 GHz using integrated passive device technology based on a silicon substrate. The investigated designs include microstrip (MS), coplanar waveguide (CPW), grounded coplanar waveguide (GCPW) transmission lines of various lengths, as well as three single-element microstrip patch antennas designed at 166, 234 and 302 GHz, respectively. Different designs are studied using both simulations and on-wafer measurements. Ground-signal-ground (GSG) radio frequency probes with 100-µm pitch are used to measure both transmission lines and antenna structures. Measurements show that the CPW line has the lowest insertion loss among all studied transmission lines. Placing vias in different arrangements in the GCPW line shows limited effects up to 220 GHz. The antenna structures highlighted the significance of proper material modelling for the frequency response. Due to measurement setup limitations, only the impedance matching of the antennas is measured.
This work analyses the performance of passive devices designed for the frequency range of 110–330 GHz using integrated passive device technology based on a silicon substrate. The investigated designs include microstrip (MS), coplanar waveguide (CPW), grounded coplanar waveguide (GCPW) transmission lines of various lengths, as well as three single-element microstrip patch antennas designed at 166, 234 and 302 GHz, respectively. Different designs are studied using both simulations and on-wafer measurements. Ground-signal-ground (GSG) radio frequency probes with 100-µm pitch are used to measure both transmission lines and antenna structures. Measurements show that the CPW line has the lowest insertion loss among all studied transmission lines. Placing vias in different arrangements in the GCPW line shows limited effects up to 220 GHz. The antenna structures highlighted the significance of proper material modelling for the frequency response. Due to measurement setup limitations, only the impedance matching of the antennas is measured.
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