Performance Enhancement of a Si Hemispherical Lens Using a Coating Layer for 300 GHz Frequency Band
Rafique, Umair; Rasilainen, Kimmo; Chen, Jiangcheng; Leinonen, Marko E.; Pärssinen, Aarno; Soh, Ping Jack (2025-05-21)
IEEE
21.05.2025
U. Rafique, K. Rasilainen, J. Chen, M. E. Leinonen, A. Pärssinen and P. J. Soh, "Performance Enhancement of a Si Hemispherical Lens Using a Coating Layer for 300 GHz Frequency Band," 2025 19th European Conference on Antennas and Propagation (EuCAP), Stockholm, Sweden, 2025, pp. 1-5, doi: 10.23919/EuCAP63536.2025.11000034.
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© 2025 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
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© 2025 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
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Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:oulu-202505273986
https://urn.fi/URN:NBN:fi:oulu-202505273986
Tiivistelmä
Abstract
To enhance the radiation characteristics of an onchip antenna, in this paper, a silicon (Si) extended hemispherical dielectric lens antenna is designed with a coating layer for subterahertz (sub-THz) applications. First, to prove the concept, the coated Si lens is illuminated using a dielectric-filled WR-3.4 waveguide. From the simulations, it is observed that the designed coated lens offers better radiation characteristics compared to a non-coated lens in the frequency range of 220−330GHz. In the second phase, an on-chip antenna is used for the lens illumination, which is designed on a high-permittivity silicon germanium (SiGe) dielectric substrate. The results show that the coated Si lens improves impedance matching and radiation performance of the on-chip antenna across the operating band, i.e., 230−360GHz.
To enhance the radiation characteristics of an onchip antenna, in this paper, a silicon (Si) extended hemispherical dielectric lens antenna is designed with a coating layer for subterahertz (sub-THz) applications. First, to prove the concept, the coated Si lens is illuminated using a dielectric-filled WR-3.4 waveguide. From the simulations, it is observed that the designed coated lens offers better radiation characteristics compared to a non-coated lens in the frequency range of 220−330GHz. In the second phase, an on-chip antenna is used for the lens illumination, which is designed on a high-permittivity silicon germanium (SiGe) dielectric substrate. The results show that the coated Si lens improves impedance matching and radiation performance of the on-chip antenna across the operating band, i.e., 230−360GHz.
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