Zn–Porphyrin Antisolvent Engineering-Enhanced Grain Boundary Passivation for High-Performance Perovskite Solar Cell
Soopy, Abdul Kareem Kalathil; Parida, Bhaskar; Aravindh, S. Assa; SahulHameed, Hiba; Swain, Bhabani Sankar; Saleh, Na'il; Taha, Inas Magdy Abdelrahman; Anjum, Dalaver Hussain; Alberts, Vivian; Liu, Shengzhong; Najar, Adel (2024-03-20)
Wiley-VCH Verlag
20.03.2024
Soopy, A.K.K., Parida, B., Aravindh, S.A., SahulHameed, H., Swain, B.S., Saleh, N., Taha, I.M.A., Anjum, D.H., Alberts, V., Liu, S. and Najar, A. (2024), Zn–Porphyrin Antisolvent Engineering-Enhanced Grain Boundary Passivation for High-Performance Perovskite Solar Cell. Sol. RRL, 8: 2400054. https://doi.org/10.1002/solr.202400054
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© 2024 Wiley-VCH GmbH. This is the peer reviewed version of the following article: Soopy, A.K.K., Parida, B., Aravindh, S.A., SahulHameed, H., Swain, B.S., Saleh, N., Taha, I.M.A., Anjum, D.H., Alberts, V., Liu, S. and Najar, A. (2024), Zn–Porphyrin Antisolvent Engineering-Enhanced Grain Boundary Passivation for High-Performance Perovskite Solar Cell. Sol. RRL, 8: 2400054, which has been published in final form at https://doi.org/10.1002/solr.202400054. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.
https://rightsstatements.org/vocab/InC/1.0/
© 2024 Wiley-VCH GmbH. This is the peer reviewed version of the following article: Soopy, A.K.K., Parida, B., Aravindh, S.A., SahulHameed, H., Swain, B.S., Saleh, N., Taha, I.M.A., Anjum, D.H., Alberts, V., Liu, S. and Najar, A. (2024), Zn–Porphyrin Antisolvent Engineering-Enhanced Grain Boundary Passivation for High-Performance Perovskite Solar Cell. Sol. RRL, 8: 2400054, which has been published in final form at https://doi.org/10.1002/solr.202400054. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.
https://rightsstatements.org/vocab/InC/1.0/
Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:oulu-202502241807
https://urn.fi/URN:NBN:fi:oulu-202502241807
Tiivistelmä
Abstract
Perovskite solar cells (PSCs) represent a promising and rapidly evolving technology in the field of photovoltaics due to their easy fabrication, low-cost materials, and remarkable efficiency improvements over a relatively short period. However, the grain boundaries in the polycrystalline films exhibit a high density of defects, resulting in not only heightened reactivity to oxygen and water but also hampered charge transport and long-term stability. Herein, an approach involving Zn-porphyrin (Zn-PP)-upgraded antisolvent treatment to enhance the grain size and meanwhile passivate grain boundary defects in FA0.95MA0.05PbI2.85Br0.15 perovskites is presented. The Zn-PP molecules significantly improve structural and optical properties, effectively mitigating defects and promoting carrier transport at the perovskite/hole transport layer interface. The density functional theory simulation confirms that Zn-PP forms a strong chemical bonding with the perovskite surface. With Zn-PP passivation, the total density of state shifts to higher-energy regions with molecular adsorption, especially near the valence and conduction band edges, indicating that there is an increase in conducting properties of the surface with molecular adsorption. The power conversion efficiency (PCE) of PSCs increases significantly as a result of this improvement, rising from 15.38% to 19.11%. Moreover, unencapsulated PSCs treated with Zn-PP exhibit outstanding stability, retaining over 91% of their initial PCE.
Perovskite solar cells (PSCs) represent a promising and rapidly evolving technology in the field of photovoltaics due to their easy fabrication, low-cost materials, and remarkable efficiency improvements over a relatively short period. However, the grain boundaries in the polycrystalline films exhibit a high density of defects, resulting in not only heightened reactivity to oxygen and water but also hampered charge transport and long-term stability. Herein, an approach involving Zn-porphyrin (Zn-PP)-upgraded antisolvent treatment to enhance the grain size and meanwhile passivate grain boundary defects in FA0.95MA0.05PbI2.85Br0.15 perovskites is presented. The Zn-PP molecules significantly improve structural and optical properties, effectively mitigating defects and promoting carrier transport at the perovskite/hole transport layer interface. The density functional theory simulation confirms that Zn-PP forms a strong chemical bonding with the perovskite surface. With Zn-PP passivation, the total density of state shifts to higher-energy regions with molecular adsorption, especially near the valence and conduction band edges, indicating that there is an increase in conducting properties of the surface with molecular adsorption. The power conversion efficiency (PCE) of PSCs increases significantly as a result of this improvement, rising from 15.38% to 19.11%. Moreover, unencapsulated PSCs treated with Zn-PP exhibit outstanding stability, retaining over 91% of their initial PCE.
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