Valley-selective carrier transfer in SnS-based van der Waals heterostructures

Abstract

Abstract

Valleytronics, i.e., use of the valley degree of freedom in semiconductors as an information carrier, is a promising alternative to conventional approaches for information processing. Transition metal dichalcogenides with degenerate K/K′ valleys have received attention as prototype 2D/layered semiconductors for valleytronics, but these systems rely on exotic effects such as the valley-Hall effect for electrical readout of the valley occupancy. Non-traditional valleytronic systems hosting sets of addressable non-degenerate valleys could overcome this limitation. In the van der Waals semiconductor Sn(II) sulfide (SnS), for instance, different bandgaps and band edges may allow manipulating the population of the X- and Y-valleys via charge transfer across interfaces to other layered semiconductors. Here, we establish this concept by comparing SnS flakes and SnS-based heterostructures. Cathodoluminescence spectroscopy shows a striking reversal of the luminescence intensity of the two valleys in SnS–GeS van der Waals stacks, which stems from a selective electron transfer from the Y-valley into GeS while X-valley electrons remain confined to SnS. Our results suggest that non-traditional systems, embodied here by SnS-based van der Waals heterostructures, open avenues for valley-selective readout relying on design parameters such as heterostructure band offsets that are among the core concepts of semiconductor technology.