Atomic Layer Deposition of Molybdenum Carbide Thin Films
Kärkkäinen, Paloma Ruiz; Popov, Georgi; Hatanpää, Timo; Kemppinen, Antti; Kohopää, Katja; Bagheri, Mohammad; Komsa, Hannu-Pekka; Heikkila, Mikko; Mizohata, Kenichiro; Chundak, Mykhailo; Deminskyi, Petro; Vihervaara, Anton; Ribeiro, Mário; Hätinen, Joel; Govenius, Joonas; Putkonen, Matti; Ritala, Mikko (2024-07-01)
Wiley-VCH Verlag
01.07.2024
P. R. Kärkkäinen, G. Popov, T. Hatanpää, A. Kemppinen, K. Kohopää, M. Bagheri, H.-P. Komsa, M. Heikkilä, K. Mizohata, M. Chundak, P. Deminskyi, A. Vihervaara, M. Ribeiro, J. Hätinen, J. Govenius, M. Putkonen, M. Ritala, Atomic Layer Deposition of Molybdenum Carbide Thin Films. Adv. Mater. Interfaces 2024, 11, 2400270. https://doi.org/10.1002/admi.202400270
https://creativecommons.org/licenses/by/4.0/
© 2024 The Author(s). Advanced Materials Interfaces published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
https://creativecommons.org/licenses/by/4.0/
© 2024 The Author(s). Advanced Materials Interfaces published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
https://creativecommons.org/licenses/by/4.0/
Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:oulu-202408125338
https://urn.fi/URN:NBN:fi:oulu-202408125338
Tiivistelmä
Abstract
The development of deposition processes for metal carbide thin films is rapidly advancing, driven by their potential for applications including catalysis, batteries, and semiconductor devices. Within this landscape, atomic layer deposition (ALD) offers exceptional conformality, uniformity, and thickness control on spatially complex structures. This paper presents a comprehensive study on the thermal ALD of MoCx with MoCl5 and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)2DHP] as precursors, focusing on the functional properties and characterization of the films. The depositions are conducted at 200–300 °C and very smooth films with RMS Rq ≈0.3–0.6 nm on Si, TiN, and HfO2 substrates are obtained. The process has a high growth rate of 1.5 Å cycle−1 and the films appear to be continuous already after 5 cycles. The films are conductive even at thicknesses below 5 nm, and films above 18 nm exhibit superconductivity up to 4.4 K. In lieu of suitable references, Raman modes for molybdenum carbides and nitrides are calculated and X-ray diffraction and X-ray photoelectron spectroscopy are used for phase analysis.
The development of deposition processes for metal carbide thin films is rapidly advancing, driven by their potential for applications including catalysis, batteries, and semiconductor devices. Within this landscape, atomic layer deposition (ALD) offers exceptional conformality, uniformity, and thickness control on spatially complex structures. This paper presents a comprehensive study on the thermal ALD of MoCx with MoCl5 and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)2DHP] as precursors, focusing on the functional properties and characterization of the films. The depositions are conducted at 200–300 °C and very smooth films with RMS Rq ≈0.3–0.6 nm on Si, TiN, and HfO2 substrates are obtained. The process has a high growth rate of 1.5 Å cycle−1 and the films appear to be continuous already after 5 cycles. The films are conductive even at thicknesses below 5 nm, and films above 18 nm exhibit superconductivity up to 4.4 K. In lieu of suitable references, Raman modes for molybdenum carbides and nitrides are calculated and X-ray diffraction and X-ray photoelectron spectroscopy are used for phase analysis.
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