High-temperature resistivity in rare-earth nickelates films
Stupakov, Alexandr; Kocourek, Tomáš; de Prado, Esther; More-Chevalier, Joris; Vetokhina, Volha; Dejneka, Alexandr; Tyunina, Marina (2023-09-17)
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Sisältö avataan julkiseksi: 17.09.2025
Elsevier
17.09.2023
Stupakov, A., Kocourek, T., De Prado, E., More-Chevalier, J., Vetokhina, V., Dejneka, A., & Tyunina, M. (2023). High-temperature resistivity in rare-earth nickelates films. Journal of Magnetism and Magnetic Materials, 587, 171256. https://doi.org/10.1016/j.jmmm.2023.171256
https://creativecommons.org/licenses/by-nc-nd/4.0/
© 2023. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/
https://creativecommons.org/licenses/by-nc-nd/4.0/
© 2023. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/
https://creativecommons.org/licenses/by-nc-nd/4.0/
Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:oulu-202405294078
https://urn.fi/URN:NBN:fi:oulu-202405294078
Tiivistelmä
Abstract
We expand the temperature interval of the resistivity measurement to clarify the charge transport mechanisms in the rare-earth nickelates ReNiO3. Thin films of LaNiO3 demonstrate an expected metallic behavior at high temperatures: a perfect linear rise of the resistivity ρ ∝ T is confirmed above room temperature. However, NdNiO3 films characterized by a sharp metal-to-insulator transition display a noticeable deviation of their high-temperature resistivity from the metallic linear relation. This deviation is suggested to originate from an additional thermally activated hopping transport. High-temperature hopping conductivity is also found in SmNiO3 films. Carrier localization due to disorder and the formation of small polarons is discussed as being responsible for hopping.
We expand the temperature interval of the resistivity measurement to clarify the charge transport mechanisms in the rare-earth nickelates ReNiO3. Thin films of LaNiO3 demonstrate an expected metallic behavior at high temperatures: a perfect linear rise of the resistivity ρ ∝ T is confirmed above room temperature. However, NdNiO3 films characterized by a sharp metal-to-insulator transition display a noticeable deviation of their high-temperature resistivity from the metallic linear relation. This deviation is suggested to originate from an additional thermally activated hopping transport. High-temperature hopping conductivity is also found in SmNiO3 films. Carrier localization due to disorder and the formation of small polarons is discussed as being responsible for hopping.
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