Parametrization of Simplified Memoryless Amplifier Models at 300 GHz
Tervo, Nuutti; Leinonen, Marko E.; Singh, Sumit Pratap; Rahkonen, Timo; Pärssinen, Aarno (2023-10-31)
IEEE
31.10.2023
N. Tervo, M. E. Leinonen, S. P. Singh, T. Rahkonen and A. Pärssinen, "Parametrization of Simplified Memoryless Amplifier Models at 300 GHz," 2023 IEEE 34th Annual International Symposium on Personal, Indoor and Mobile Radio Communications (PIMRC), Toronto, ON, Canada, 2023, pp. 1-6, doi: 10.1109/PIMRC56721.2023.10293906
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© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
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Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:oulu-202401021029
https://urn.fi/URN:NBN:fi:oulu-202401021029
Tiivistelmä
Abstract
Behavioral amplifier models are heavily used in system-level simulations to understand the fundamental impact of a certain kind of nonlinearity for the designed transmit and receive signals. However, every model requires an accurate set of parameters to gain realistic results, which are not often publicly available, especially for higher frequency bands at millimeter-wave and above that. This applies also to transistor models used in amplifier simulations, which are, in most cases, characterized by measurements only up to around 100 GHz. In this paper, we fit parameters of common memoryless amplifier models, such as Rapp, Ghorbani, and Saleh, against measurement and circuit-level simulation data of a 300 GHz amplifier. The derived model parameters are given such that they can be used by other researchers when studying the impacts of nonlinearity. As an example, the models are utilized to simulate error vector magnitude performance with different input and output signal powers.
Behavioral amplifier models are heavily used in system-level simulations to understand the fundamental impact of a certain kind of nonlinearity for the designed transmit and receive signals. However, every model requires an accurate set of parameters to gain realistic results, which are not often publicly available, especially for higher frequency bands at millimeter-wave and above that. This applies also to transistor models used in amplifier simulations, which are, in most cases, characterized by measurements only up to around 100 GHz. In this paper, we fit parameters of common memoryless amplifier models, such as Rapp, Ghorbani, and Saleh, against measurement and circuit-level simulation data of a 300 GHz amplifier. The derived model parameters are given such that they can be used by other researchers when studying the impacts of nonlinearity. As an example, the models are utilized to simulate error vector magnitude performance with different input and output signal powers.
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