Theory for anisotropic local ferroelectric switching
Fomichov, Y. M.; Yudin, P. V.; Tyunina, M.; Dejneka, A. (2023-11-10)
Institute of physics publishing
10.11.2023
Fomichov, Y. M. et al (2023). Theory for anisotropic local ferroelectric switching. In Nanotechnology (Vol. 35, Issue 4, p. 04LT01). IOP Publishing. https://doi.org/10.1088/1361-6528/ad0595.
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© 2023 The Author(s). Published by IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
https://creativecommons.org/licenses/by/4.0/
© 2023 The Author(s). Published by IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
https://creativecommons.org/licenses/by/4.0/
Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:oulu-202312153813
https://urn.fi/URN:NBN:fi:oulu-202312153813
Tiivistelmä
Abstract
Theoretical modeling of polarization switching around a biased tip contact is important for fundamental understanding and advanced applications of ferroelectrics. Here we propose a simple in-plane two-dimensional model that considers surface charge transport and the associated evolution of the electric field driving domain growth. The model reproduces peculiar domain shapes ranging from round to faceted in KTiOPO4 (C2v symmetry) and LiNbO3 (C3v symmetry). This is done through modulation of dielectric permittivity, which mimics domain wall pinning on the lattice. In contrast to previous works, which attempted to justify domain anisotropy by means of point symmetry invariants, here we illustrate the necessity of taking translational symmetry into account. The results are pertinent to ferroelectric racetrack memories and other applications requiring domain tailoring.
Theoretical modeling of polarization switching around a biased tip contact is important for fundamental understanding and advanced applications of ferroelectrics. Here we propose a simple in-plane two-dimensional model that considers surface charge transport and the associated evolution of the electric field driving domain growth. The model reproduces peculiar domain shapes ranging from round to faceted in KTiOPO4 (C2v symmetry) and LiNbO3 (C3v symmetry). This is done through modulation of dielectric permittivity, which mimics domain wall pinning on the lattice. In contrast to previous works, which attempted to justify domain anisotropy by means of point symmetry invariants, here we illustrate the necessity of taking translational symmetry into account. The results are pertinent to ferroelectric racetrack memories and other applications requiring domain tailoring.
Kokoelmat
- Avoin saatavuus [37744]
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