A low-power push-push D-band VCO with 11.6% FTR utilizing back-gate control in 22nm FDSOI
Shafiullah, Yasir; Hietanen, Mikko; Leinonen, Marko E.; Akbar, Rehman; Aikio, Janne; Rusanen, Jere; Rahkonen, Timo; Pärssinen, Aarno (2023-02-22)
Y. Shafiullah et al., "A Low-Power Push-Push D-Band VCO with 11.6% FTR utilizing Back-gate Control in 22nm FDSOI," 2023 IEEE Radio and Wireless Symposium (RWS), Las Vegas, NV, USA, 2023, pp. 20-23, doi: 10.1109/RWS55624.2023.10046316.
© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
https://rightsstatements.org/vocab/InC/1.0/
https://urn.fi/URN:NBN:fi-fe20231004138787
Tiivistelmä
Abstract
This paper proposes a D-band push-push voltage controlled oscillator implemented using 22nm FDSOI CMOS technology. The back-gate controls are employed to achieve a wide frequency tuning range (FTR) and low power consumption. Inductive coupling with the dummy fill blocks are optimized to improve the resonator quality factor. The measured results demonstrate a wide tuning range of 11.6% from 138‐155.1 GHz with a supply voltage of 0.9 V. The output power of the VCO is -16 dBm at a center frequency of 146.6 GHz with a phase noise of -90.1 dBc/Hz at 10 MHz offset. The VCO consumes a low power of 12.2 mW with a compact area of 259x249 µ m² • The corresponding FOMT is -163.9 dBc/Hz.
Kokoelmat
- Avoin saatavuus [38821]