A study of the effects limiting the responsivity of a broadband THz power detector with on-chip antenna in 0.13μm SiGe HBT technology

Shabanzadeh, Negar; Nokandi, Mostafa Jafari; Rasilainen, Kimmo; Chen, Jiangcheng; Singh, Sumit Pratap; Pärssinen, Aarno; Rahkonen, Timo (2022-11-08)
 
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https://doi.org/10.1109/norcas57515.2022.9934190

Shabanzadeh, Negar
Nokandi, Mostafa Jafari
Rasilainen, Kimmo
Chen, Jiangcheng
Singh, Sumit Pratap
Pärssinen, Aarno
Rahkonen, Timo
IEEE
08.11.2022

N. Shabanzadeh et al., "A Study of the Effects Limiting the Responsivity of A Broadband THz Power Detector with On-chip Antenna in 0.13μm SiGe HBT Technology," 2022 IEEE Nordic Circuits and Systems Conference (NorCAS), Oslo, Norway, 2022, pp. 1-5, doi: 10.1109/NorCAS57515.2022.9934190

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doi:https://doi.org/10.1109/norcas57515.2022.9934190
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Abstract

This paper presents a broadband THz power detector with on-chip antenna implemented in 0.13μm SiGe HBT technology. The detector has a center frequency of 280 GHz, bandwidth of 64 GHz and responsivity of about 1 A/W. The nonlinear response of the power detector is analyzed and un-desirable linearization effects are discussed. High DC current gain and low-impedance base biasing are shown to improve the conversion gain, but the dominant gain-reducing effect is the feedback from the emitter resistance. The dynamic range and noise sources are also explained.

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