A 270–330 GHz vector modulator phase shifter in 130nm SiGe BiCMOS
Montaseri, Mohammad Hassan; Singh, Sumit Pratap; Jokinen, Markku; Rahkonen, Timo; Leinonen, Marko E.; Pärssinen, Aarno (2022-06-01)
M. H. Montaseri, S. P. Singh, M. Jokinen, T. Rahkonen, M. E. Leinonen and A. Pärssinen, "A 270 – 330 GHz Vector Modulator Phase Shifter in 130nm SiGe BiCMOS," 2021 16th European Microwave Integrated Circuits Conference (EuMIC), London, United Kingdom, 2022, pp. 309-312, doi: 10.23919/EuMIC50153.2022.9783775
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https://urn.fi/URN:NBN:fi-fe2023040535140
Tiivistelmä
Abstract
This paper presents a wideband vector modulator phase shifter measured at frequency bands reaching and ever surpassing the f t of the technology for 6G beamforming for extremely high data rate applications. The circuit is designed based on 130nm SiGe BiCMOS technology with f t / f max of 300/500 GHz. The chip occupies a die area of 0.53×0.48 mm² and offers a total 360° of phase variation with a pad-to-pad gain of -10dB over its 270–330 GHz operational ranges.
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