Ka-band stacked and pseudo-differential orthogonal load-modulated balanced power amplifier in 22 nm CMOS FDSOI
Rusanen, Jere; Sethi, Alok; Tervo, Nuutti; Kiuru, Veeti; Rahkonen, Timo; Pärssinen, Aarno; Aikio, Janne P. (2023-10-11)
Cambridge University Press
11.10.2023
Rusanen, J., Sethi, A., Tervo, N., Kiuru, V., Rahkonen, T., Pärssinen, A., & Aikio, J. (2023). Ka-band stacked and pseudo-differential orthogonal load-modulated balanced power amplifier in 22 nm CMOS FDSOI. International Journal of Microwave and Wireless Technologies, 1-8. doi:10.1017/S1759078723001137
https://creativecommons.org/licenses/by/4.0/
© The Author(s), 2023. Published by Cambridge University Press in association with the European Microwave Association. This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0), which permits unrestricted re-use, distribution and reproduction, provided the original article is properly cited.
https://creativecommons.org/licenses/by/4.0/
© The Author(s), 2023. Published by Cambridge University Press in association with the European Microwave Association. This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0), which permits unrestricted re-use, distribution and reproduction, provided the original article is properly cited.
https://creativecommons.org/licenses/by/4.0/
Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:oulu-202311283398
https://urn.fi/URN:NBN:fi:oulu-202311283398
Tiivistelmä
Abstract
This paper presents an integrated power amplifier (PA) following the orthogonal load-modulated balanced amplifier (OLMBA) topology. The fixed-phase prototype in this paper is implemented with 22 nm complementary metal oxide semiconductor (CMOS) fully depleted silicon-on-insulator (FDSOI) process. The proposed PA operates at 26 GHz frequency range, where it achieves 19.5 dBm output power, 16.6 dB gain, 15.7% power added efficiency, and 18.3 dBm output 1-dB compression point (P1dB). The PA is also tested with high dynamic range modulated signals, and it achieves, respectively, 11.4 dBm and 4.9 dBm average output power (Pavg) with 100 MHz and 400 MHz 64-QAM third-generation partnership project/new radio frequency range 2 signals, and 14 dBm Pavg with 0.6 Gb/s (120 MHz) single carrier 64-QAM signal, measured at 26 GHz and using −28 dBc adjacent channel leakage ratio and −21.9 dB (8%) error vector magnitude as threshold values. The proposed OLMBA is also compared to a stand-alone quadrature-balanced PA. Modulated measurements show that the stand-alone quadrature-balanced PA has better linearity in deep back-off, but the OLMBA has better efficiency.
This paper presents an integrated power amplifier (PA) following the orthogonal load-modulated balanced amplifier (OLMBA) topology. The fixed-phase prototype in this paper is implemented with 22 nm complementary metal oxide semiconductor (CMOS) fully depleted silicon-on-insulator (FDSOI) process. The proposed PA operates at 26 GHz frequency range, where it achieves 19.5 dBm output power, 16.6 dB gain, 15.7% power added efficiency, and 18.3 dBm output 1-dB compression point (P1dB). The PA is also tested with high dynamic range modulated signals, and it achieves, respectively, 11.4 dBm and 4.9 dBm average output power (Pavg) with 100 MHz and 400 MHz 64-QAM third-generation partnership project/new radio frequency range 2 signals, and 14 dBm Pavg with 0.6 Gb/s (120 MHz) single carrier 64-QAM signal, measured at 26 GHz and using −28 dBc adjacent channel leakage ratio and −21.9 dB (8%) error vector magnitude as threshold values. The proposed OLMBA is also compared to a stand-alone quadrature-balanced PA. Modulated measurements show that the stand-alone quadrature-balanced PA has better linearity in deep back-off, but the OLMBA has better efficiency.
Kokoelmat
- Avoin saatavuus [34150]
Ellei muuten mainita, aineiston lisenssi on https://creativecommons.org/licenses/by/4.0/