Ka-Band 4-stack 45nm CMOS SOI power amplifier supporting 3GPP new radio FR2 band n258

Aikio, Janne P.; Sethi, Alok; Hietanen, Mikko; Rahkonen, Timo; Pärssinen, Aarno (2021-03-26)
 
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https://doi.org/10.1109/IMOC43827.2019.9317652

Aikio, Janne P.
Sethi, Alok
Hietanen, Mikko
Rahkonen, Timo
Pärssinen, Aarno
Institute of Electrical and Electronics Engineers
26.03.2021

J. P. Aikio, A. Sethi, M. Hietanen, T. Rahkonen and A. Pärssinen, "Ka-Band 4-Stack 45nm CMOS SOI Power Amplifier Supporting 3GPP New Radio FR2 band n258," 2019 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC), 2019, pp. 1-3, doi: 10.1109/IMOC43827.2019.9317652

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doi:https://doi.org/10.1109/IMOC43827.2019.9317652
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https://urn.fi/URN:NBN:fi-fe2021051129509
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Abstract

This paper presents a fully integrated, four-stack power amplifier for millimeter-wave wireless applications, designed and fabricated using 45nm CMOS SOI technology. The operation frequency is from 20GHz to 30GHz, with a maximum gain of 13.7 dB. Maximum RF output power, power-added eficiency and output 1dB compression point are 20.5 dBm, 29% and 18dBm, respectively, achieved at 24GHz. EVM of 12.5% was measured at average channel power of 14.5 dBm using 100MHz 16-QAM 3GPP/NR OFDM signal at 26GHz.

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