Ka-band TDD front-end with gate shunt switched cascode LNA and three-stack PA on 22nm FDSOI CMOS technology
Hietanen, Mikko; Rusanen, Jere; Aikio, Janne P.; Tervo, Nuutti; Rahkonen, Timo; Pärssinen, Aarno (2021-01-15)
Hietanen, M., Rusanen, J., Aikio, J.P., Tervo, N., Rahkonen, T., Pärssinen, A., Ka-band TDD front-end with gate shunt switched cascode LNA and three-stack PA on 22nm FDSOI CMOS technology, Proceedings of the 50th European Microwave Conference, ISBN: 978-287487-059-0, p. 945-948
© European Microwave Association. Self-archived here with the kind permission of the publisher.
https://rightsstatements.org/vocab/InC/1.0/
https://urn.fi/URN:NBN:fi-fe202101222344
Tiivistelmä
Abstract
TDD Ka-band front-end with integrated switch on 22nm FDSOI CMOS technology is implemented for 5G NR at 24–28 GHz bands. Shunt switch technique reduces front-end performance only by 2 dB at 24 GHz compared to stand-alone reference amplifiers. Output power of TX with stacked PA is 13.6 dBm with 15 dB of peak gain, and RX front-end has 5dB noise figure at 24 GHz, both measured at the antenna port. Maximum average channel power at 28 GHz was 4.8 dBm with 100 MHz 64-QAM OFDM signal within 5G ACPR and EVM specifications. The PA and LNA amplifiers dissipate 183 mW and 4.6 mW from 2.8V and 0.8V supplies, respectively, occupying only 0.19mm2.
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