Iron-intercalated zirconium diselenide thin films from the low-pressure chemical vapor deposition of [Fe(η⁵-C₅H₄Se)₂Zr(η⁵-C₅H₅)₂]₂
Sanchez-Perez, Clara; Knapp, Caroline E.; Colman, Ross H.; Sotelo-Vazquez, Carlos; Sathasivam, Sanjayan; Oilunkaniemi, Raija; Laitinen, Risto S.; Carmalt, Claire J. (2020-06-24)
ACS Omega 2020, 5, 26, 15799–15804, http://doi.org/10.1021/acsomega.0c00413
© 2020 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
https://creativecommons.org/licenses/by/4.0/
https://urn.fi/URN:NBN:fi-fe2020091069216
Tiivistelmä
Abstract
Transition metal chalcogenide thin films of the type FexZrSe₂ have applications in electronic devices, but their use is limited by current synthetic techniques. Here, we demonstrate the synthesis and characterization of Fe-intercalated ZrSe₂ thin films on quartz substrates using the low-pressure chemical vapor deposition of the single-source precursor [Fe(η⁵-C₅H₄Se)₂Zr(η⁵-C₅H₅)₂]₂. Powder X-ray diffraction of the film scraping and subsequent Rietveld refinement of the data showed the successful synthesis of the Fe0.14ZrSe₂ phase, along with secondary phases of FeSe and ZrO₂. Upon intercalation, a small optical band gap enhancement (Eg(direct)opt = 1.72 eV) is detected in comparison with that of the host material.
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