Double-asymmetric-structure 1.5 μ m high power laser diodes
Hallman, Lauri; Ryvkin, Boris S.; Avrutin, Eugene A.; Aho, Antti T.; Viheriälä, Jukka (2019-12-23)
L. Hallman et al., "Double-asymmetric-structure 1.5 μ m high power laser diodes," 2019 IEEE High Power Diode Lasers and Systems Conference (HPD), Coventry, United Kingdom, 2019, pp. 19-20, doi: 10.1109/HPD48113.2019.8938671
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https://urn.fi/URN:NBN:fi-fe2020062545665
Tiivistelmä
Abstract
Design considerations for high pulsed power and brightness 1.5 μm laser emitters for laser radar applications, based on comprehensive semi-analytical theory, are presented. A strongly asymmetric waveguide design with a bulk active layer positioned very near the p-emitter interface is chosen to minimize the current-induced losses at high power while maintaining a single, broad transverse mode. Moderate to high doping of the n-side of the Optical Confinement Layer and high p-doping of the p-cladding layer are used to reduce the residual current-induced losses and the electric resistance of the structure. For pulsed room-temperature operation, short laser resonators are found to be advantageous. First experimental results are presented. An as-cleaved sample with a stripe width of 90 μm and a resonator 2 mm long exhibits an output power of about 18 W at a pumping current amplitude of 80 A, with 1 mm long resonators showing higher power output. Further improvements are predicted by structure optimization as well as increase in internal quantum efficiency and thermal performance.
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