Time-gated CMOS SPAD and a quantum well laser diode with a CMOS driver for time-resolved diffuse optics imaging

Nissinen, J.; Nissinen, I.; Jahromi, S.; Talala, T.; Kostamovaara, J. (2018-12-13)
 
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https://doi.org/10.1109/NORCHIP.2018.8573525

Nissinen, J.
Nissinen, I.
Jahromi, S.
Talala, T.
Kostamovaara, J.
Institute of Electrical and Electronics Engineers
13.12.2018

J. Nissinen, I. Nissinen, S. Jahromi, T. Talala and J. Kostamovaara, "Time-gated CMOS SPAD and a Quantum Well Laser Diode with a CMOS Driver for Time-Resolved Diffuse Optics Imaging," 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC), Tallinn, Estonia, 2018, pp. 1-4. doi: 10.1109/NORCHIP.2018.8573525

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doi:https://doi.org/10.1109/NORCHIP.2018.8573525
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https://urn.fi/URN:NBN:fi-fe201901101935
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Abstract

Single-Photon Avalanche Photodiodes (SPADs) were fabricated and characterized in 150 nm CMOS technology. The SPAD is based on a p+/nwell junction with a p-substrate guard ring. In addition, a compact gain switched quantum well (QW) laser diode with a CMOS driver was used with the proposed SPAD for time-resolved diffuse optics measurements. The measured impulse response function (IRF) of the SPADs was ∼50 ps at best. Two phantoms were measured to demonstrate the suitability of SPADs for time-resolved diffuse optics imaging (TRDOI).

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