Viable route towards large-area 2D MoS₂ using magnetron sputtering
Samassekou, Hassana; Alkabsh, Asma; Wasala, Milinda; Eaton, Miller; Walber, Aaron; Walker, Andrew; Pitkänen, Olli; Kordas, Krisztian; Talapatra, Saikat; Jayasekera, Thushari; Mazumdar, Dipanjan (2017-01-11)
Samassekou, H., Alkabsh, A., Wasala, M., Eaton, M., Walber, A., Walker, A., … Mazumdar, D. (2017). Viable route towards large-area 2D MoS2 using magnetron sputtering. 2D Materials, 4(2), 21002. https://doi.org/10.1088/2053-1583/aa5290
© 2017 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article published in 2D Materials. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/2053-1583/aa5290.
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https://urn.fi/URN:NBN:fi-fe2019060618850
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Abstract
Structural, interfacial, optical, and transport properties of large-area MoS₂ ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated here that simultaneously promotes superior interfacial and bulk MoS₂ properties. Few layers of MoS₂ are established using x-ray reflectivity, diffraction, ellipsometry, and Raman spectroscopy measurements. Layer-specific modeling of optical constants show very good agreement with first-principles calculations. Conductivity measurements reveal that few-layer MoS₂ films are more conducting than many-layer films. Photo-conductivity measurements reveal that the sputter deposited MoS₂ films compare favorably with other large-area methods. Our work illustrates that sputtering is a viable route for large-area device applications using transition metal dichalcogenides.
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