Electrical and photoelectrical characteristics of с-Si/porous–Si/CdS heterojunctions

Mamedov, H. M.; Kukevecz, A.; Konya, Z.; Kordas, K.; Shah, S. I.; Mamedov, V. U.; Ahmedova, Kh. M.; Mamedova, V. J.; Rzaev, R. M.; Shamilova, Sh. A.; Khanmamedova, E. A.; Agazade, L. E. (2019-01-01)
 
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https://doi.org/10.1007/s11182-018-1584-2

Mamedov, H. M.
Kukevecz, A.
Konya, Z.
Kordas, K.
Shah, S. I.
Mamedov, V. U.
Ahmedova, Kh. M.
Mamedova, V. J.
Rzaev, R. M.
Shamilova, Sh. A.
Khanmamedova, E. A.
Agazade, L. E.
Springer Nature
01.01.2019

Mamedov, H.M., Kukevecz, A., Konya, Z. et al. Russ Phys J (2019) 61: 1660. https://doi.org/10.1007/s11182-018-1584-2

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© 2019 Springer Science+Business Media, LLC. This is a post-peer-review, pre-copyedit version of an article published in Russian Physics Journal. The final authenticated version is available online at: https://doi.org/10.1007/s11182-018-1584-2.
https://rightsstatements.org/vocab/InC/1.0/
doi:https://doi.org/10.1007/s11182-018-1584-2
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https://urn.fi/URN:NBN:fi-fe2019052016076
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Abstract

Depending on the sizes of the CdS crystallites and silicon pores, electrical and photoelectrical characteristics of c-Si/porous–Si/CdS heterojunctions prepared by electrochemical deposition and anodization, respectively, are studied. The optimal pore size (10–16 nm) is determined, which provides the maximum photoelectric conversion efficiency (7.71%) of heterojunctions.

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