Ka-band 3-stack power amplifier with 18.8 dBm P<sub>sat</sub> and 23.4 % PAE using 22nm CMOS FDSOI technology

Aikio, Janne P.; Hietanen, Mikko; Tervo, Nuutti; Rahkonen, Timo; Pärssinen, Aarno (2019-05-09)
 
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https://doi.org/10.1109/PAWR.2019.8708719

Aikio, Janne P.
Hietanen, Mikko
Tervo, Nuutti
Rahkonen, Timo
Pärssinen, Aarno
Institute of Electrical and Electronics Engineers
09.05.2019

J. P. Aikio, M. Hietanen, N. Tervo, T. Rahkonen and A. Pärssinen, "Ka-Band 3-Stack Power Amplifier with 18.8 dBm Psat and 23.4 % PAE Using 22nm CMOS FDSOI Technology," 2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), Orlando, FL, USA, 2019, pp. 1-3. doi: 10.1109/PAWR.2019.8708719

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doi:https://doi.org/10.1109/PAWR.2019.8708719
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https://urn.fi/URN:NBN:fi-fe2019081223985
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Abstract

This paper presents a fully integrated, three-stack power amplifier for 5G wireless systems, designed and fabricated using 22nm CMOS FDSOI technology. The frequency of operation is from 25 GHz to 30.5 GHz, with a maximum 3 dB bandwidth of 5.5 GHz and a maximum gain of 9.9 dB. Maximum RF output power, power-added efficiency (PAE) and output 1 dB compression point are 18.8 dBm, 23.4% and 14.9dBm, respectively, achieved at 28.5 GHz.

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