Strong doping of the n-optical confinement layer for increasing output power of high- power pulsed laser diodes in the eye safe wavelength range

Ryvkin, Boris S.; Avrutin, Eugene A.; Kostamovaara, Juha T. (2017-10-13)
 
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URL:
https://doi.org/10.1088/1361-6641/aa92fd

Ryvkin, Boris S.
Avrutin, Eugene A.
Kostamovaara, Juha T.
IOP Publishing
13.10.2017

Boris S Ryvkin et al 2017 Semicond. Sci. Technol. 32 125008. doi: 10.1088/1361-6641/aa92fd

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© 2017 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/aa92fd.
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doi:https://doi.org/10.1088/1361-6641/aa92fd
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https://urn.fi/URN:NBN:fi-fe2019041512341
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Abstract

An analytical model for internal optical losses at high power in a 1.5 μm laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption (TPA), as well as the direct TPA effect. The resulting losses are compared with those in an identical structure with a weakly doped waveguide, and shown to be substantially lower, resulting in a significant improvement in the output power and efficiency in the structure with a strongly doped waveguide.

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