PLD prepared bioactive BaTiO₃ films on TiNb implants
Jelínek, Miroslav; Vaněk, Přemysl; Tolde, Zdeněk; Buixaderas, Elena; Kocourek, Tomáš; Studnička, Václav; Drahokoupil, Jan; Petzelt, Jan; Remsa, Jan; Tyunina, Marina (2017-01-01)
Miroslav Jelínek, Přemys Vaněk, Zdeněk Tolde, Elena Buixaderas, Tomáš Kocourek, Václav Studnička, Jan Drahokoupil, Jan Petzelt, Jan Remsa, Marina Tyunina, PLD prepared bioactive BaTiO₃ films on TiNb implants, Materials Science and Engineering: C, Volume 70, Part 1, 2017, Pages 334-339, ISSN 0928-4931, https://doi.org/10.1016/j.msec.2016.08.072.
© 2016 Elsevier B.V. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
https://creativecommons.org/licenses/by-nc-nd/4.0/
https://urn.fi/URN:NBN:fi-fe2019051315364
Tiivistelmä
Abstract
BaTiO₃ (BTO) layers were deposited by pulsed laser deposition (PLD) on TiNb, Pt/TiNb, Si (100), and fused silica substrates using various deposition conditions. Polycrystalline BTO with sizes of crystallites in the range from 90 nm to 160 nm was obtained at elevated substrate temperatures of (600 °C–700 °C). With increasing deposition temperature above 700 °C the formation of unwanted rutile phase prevented the growth of perovskite ferroelectric BTO. Concurrently, with decreasing substrate temperature below 500 °C, amorphous films were formed. Post-deposition annealing of the amorphous deposits allowed obtaining perovskite BTO. Using a very thin Pt interlayer between the BTO films and TiNb substrate enabled high-temperature growth of preferentially oriented BTO. Raman spectroscopy and electrical characterization indicated polar ferroelectric behaviour of the BTO films.
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