Increasing output power of pulsed-eye safe wavelength range laser diodes by strong doping of the n-optical confinement layer

Avrutin, Eugene A.; Ryvkin, Boris S.; Kostamovaara, Juha T. (2018-01-18)
 
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https://doi.org/10.1109/HPD.2017.8261082

Avrutin, Eugene A.
Ryvkin, Boris S.
Kostamovaara, Juha T.
Institute of Electrical and Electronics Engineers
18.01.2018

E. A. Avrutin, B. S. Ryvkin and J. T. Kostamovaara, "Increasing output power of pulsed-eye safe wavelength range laser diodes by strong doping of the n-optical confinement layer," 2017 IEEE High Power Diode Lasers and Systems Conference (HPD), Coventry, 2017, pp. 17-18. doi: 10.1109/HPD.2017.8261082

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doi:https://doi.org/10.1109/HPD.2017.8261082
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Abstract

A semi-analytical model for internal optical losses at high power in a 1.5 μm laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption. The resulting losses are shown to be substantially lower than those in a similar, but weakly doped structure. Thus a significant improvement in the output power and efficiency by strong n-doping is predicted.

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