A fully integrated 13 GHz CMOS SOI stacked power amplifier for 5G wireless systems
Aikio, Janne P.; Sethi, Alok; Shaheen, Rana A.; Akbar, Rehman; Rahkonen, Timo; Pärssinen, Aarno (2017-12-01)
J. P. Aikio, A. Sethi, R. A. Shaheen, R. Akbar, T. Rahkonen and A. Pärssinen, "A fully integrated 13 GHz CMOS SOI stacked power amplifier for 5G wireless systems," 2017 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC), Linkoping, 2017, pp. 1-4. doi: 10.1109/NORCHIP.2017.8124993
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This paper presents a fully integrated, four stack power amplifier for 5G wireless systems. The frequency of operation is tunable from 12 GHz to 14 GHz, with a maximum 3 dB bandwidth of 1 GHz and a maximum possible gain of 35 dB. The circuit is designed and fabricated using 45 nm CMOS SOI technology. Maximum RF output power, power-added efficiency (PAE) and output 1 dB compression point under maximum bandwidth configuration are 17.7 dBm, 23.2% and 12.3 dBm, respectively, achieved at 13.7 GHz.
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