A fully integrated 13 GHz CMOS SOI stacked power amplifier for 5G wireless systems

Aikio, Janne P.; Sethi, Alok; Shaheen, Rana A.; Akbar, Rehman; Rahkonen, Timo; Pärssinen, Aarno (2017-12-01)
 
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URL:
https://doi.org/10.1109/NORCHIP.2017.8124993

Aikio, Janne P.
Sethi, Alok
Shaheen, Rana A.
Akbar, Rehman
Rahkonen, Timo
Pärssinen, Aarno
Institute of Electrical and Electronics Engineers
01.12.2017

J. P. Aikio, A. Sethi, R. A. Shaheen, R. Akbar, T. Rahkonen and A. Pärssinen, "A fully integrated 13 GHz CMOS SOI stacked power amplifier for 5G wireless systems," 2017 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC), Linkoping, 2017, pp. 1-4. doi: 10.1109/NORCHIP.2017.8124993

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doi:https://doi.org/10.1109/NORCHIP.2017.8124993
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https://urn.fi/URN:NBN:fi-fe201803216107
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Abstract

This paper presents a fully integrated, four stack power amplifier for 5G wireless systems. The frequency of operation is tunable from 12 GHz to 14 GHz, with a maximum 3 dB bandwidth of 1 GHz and a maximum possible gain of 35 dB. The circuit is designed and fabricated using 45 nm CMOS SOI technology. Maximum RF output power, power-added efficiency (PAE) and output 1 dB compression point under maximum bandwidth configuration are 17.7 dBm, 23.2% and 12.3 dBm, respectively, achieved at 13.7 GHz.

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