An 80 × 25 pixel CMOS single-photon image sensor with sub-ns time gating for solid state 3D scanning

Ruokamo, Henna; Rapakko, Harri; Kostamovaara, Juha (2017-07-13)
 
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URL:
https://doi.org/10.1109/PRIME.2017.7974183

Ruokamo, Henna
Rapakko, Harri
Kostamovaara, Juha
Institute of Electrical and Electronics Engineers
13.07.2017

H. Ruokamo, H. Rapakko and J. Kostamovaara, "An 80 × 25 pixel CMOS single-photon image sensor with sub-ns time gating for solid state 3D scanning," 2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Giardini Naxos, 2017, pp. 365-368. doi: 10.1109/PRIME.2017.7974183

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doi:https://doi.org/10.1109/PRIME.2017.7974183
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https://urn.fi/URN:NBN:fi-fe2018122051448
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Abstract

Imager topology with sub-ns time gating for 3D distance measurement application and first measurement results of the prototype are presented. The imager has a fully digital operating principle with single-photon avalanche diode detectors and on-chip narrow gating of pixel groups. The prototype detector has 80 × 25 pixels with a fill factor of 34 % in the sensor area. The chip has been fabricated in a 0.35 μm high-voltage process and occupies 5.69 × 5.02 mm2 area.

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